Si4455
Table 8. Thermal Characteristics
Parameter
Thermal Resistance Junction to Ambient
Junction Temperature
Symbol
φ JA
T J
Test Condition
Still Air
Max Value
30
92
Unit
°C/W
°C
Table 9. Absolute Maximum Ratings
Parameter
V DD to GND
Voltage on Digital Control Inputs
Voltage on Analog Inputs
RX Input Power
Operating Ambient Temperature Range T A
Storage Temperature Range T STG
Value
–0.3, +3.6
–0.3, V DD + 0.3
–0.3, V DD + 0.3
+10
–40 to +85
–55 to +125
Unit
V
V
V
dBm
? C
? C
Note: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only and functional operation of the device at or beyond these ratings in the operational sections of
the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability. The Power Amplifier may be damaged if switched on without proper load or termination connected.
TX matching network design will influence TX V RF-peak on TX output pin. Caution: ESD sensitive device.
10
Rev 1.1
相关PDF资料
SI4462DY-T1-GE3 MOSFET N-CH 200V 1.15A 8-SOIC
SI4463-915-DK KIT DEV WIRELESS SI4463 915MHZ
SI4465ADY-T1-GE3 MOSFET P-CH 8V 13.7A 8SOIC
SI4466DY-T1-GE3 MOSFET N-CH 20V 9.5A 8-SOIC
SI4470EY-T1-GE3 MOSFET N-CH D-S 60V 8-SOIC
SI4472DY-T1-GE3 MOSFET N-CH D-S 150V 8-SOIC
SI4477DY-T1-GE3 MOSFET P-CH D-S 20V 8-SOIC
SI4483EDY-T1-GE3 MOSFET P-CH D-S 30V 8-SOIC
相关代理商/技术参数
Si4455-B1A-FMR 功能描述:射频收发器 Si4455 EZRadio Transceiver RoHS:否 制造商:Atmel 频率范围:2322 MHz to 2527 MHz 最大数据速率:2000 Kbps 调制格式:OQPSK 输出功率:4 dBm 类型: 工作电源电压:1.8 V to 3.6 V 最大工作温度:+ 85 C 接口类型:SPI 封装 / 箱体:QFN-32 封装:Tray
SI4455-B1A-GM 制造商:Silicon Laboratories Inc 功能描述:SI4455 EZRADIO TRANSCEIVER - Bulk
SI4455-C2A-GM 功能描述:IC RF TxRx + MCU General ISM < 1GHz 284MHz ~ 960MHz 20-VFQFN Exposed Pad 制造商:silicon labs 系列:- 包装:托盘 零件状态:有效 类型:TxRx + MCU 射频系列/标准:通用 ISM < 1GHz 协议:- 调制:FSK,GFSK,OOK 频率:284MHz ~ 960MHz 数据速率(最大值):500kbps 功率 - 输出:13dBm(最小值) 灵敏度:-115dBm 存储容量:- 串行接口:SPI GPIO:4 电压 - 电源:1.8 V ~ 3.6 V 电流 - 接收:10.9mA 电流 - 传输:19mA ~ 24mA 工作温度:-40°C ~ 85°C 封装/外壳:20-VFQFN 裸露焊盘 标准包装:490
SI4455-C2A-GMR 功能描述:IC RF TXRX+MCU ISM<1GHZ 20-VFQFN 制造商:silicon labs 系列:* 包装:剪切带(CT) 零件状态:在售 封装/外壳:20-VFQFN 裸露焊盘 标准包装:1
SI4455DY 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 150-V (D-S) MOSFET
SI4455DY-T1-E3 功能描述:MOSFET 150V 8.9A 5.9W 295mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4455DY-T1-GE3 功能描述:MOSFET 150V 8.9A 5.9W 295mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4456DY-T1-E3 功能描述:MOSFET 40V 33A 7.8W 3.8mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube